wholesale 2SC5949-O(Q) BJTs - Bipolar Transistors supplier,manufacturer,distributor

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2SC5949-O(Q)

Bipolar Transistors - BJT Transistor NPN 200V 15A

  • BJTs - Bipolar Transistors
  • 2SC5949-O(Q)
  • Toshiba
  • Tray
  • In Stock
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Mfr. Part #: 2SC5949-O(Q)

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  • Specifications

Specifications

Manufacturer Toshiba
RoHS
Mounting Style Through Hole
Package / Case TO-3P-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 200 V
Collector- Base Voltage VCBO 200 V
Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 400 mV
Maximum DC Collector Current 15 A
Pd - Power Dissipation 220 W
Gain Bandwidth Product fT 30 MHz
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series 2SC5949
Packaging Tray
DC Current Gain hFE Max 160
Height 5.2 mm
Length 26 mm
Technology Si
Width 20.5 mm
Brand Toshiba
Continuous Collector Current 15 A
DC Collector/Base Gain hfe Min 55
Product Type BJTs - Bipolar Transistors
Standard Pack Qty 100
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the 2SC5949-O(Q). As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: 2SC5949-O(Q)

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