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A3G18H500-04SR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-2200 MHz, 107 W Avg., 48 V

Product Category: RF MOSFET Transistors
Mfr. Part #
A3G18H500-04SR3
Manufacturer: NXP
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: A3G18H500-04SR3 Datasheet
Inventory: In Stock

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Mfr. Part #: A3G18H500-04SR3

Specifications

Specifications

Manufacturer NXP

Transistor Polarity Dual N-Channel

Technology Si

Id - Continuous Drain Current 200 mA

Vds - Drain-Source Breakdown Voltage 125 V

Operating Frequency 1805 MHz to 1880 MHz

Gain 15.4 dB

Output Power 107 W

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case NI-780S-4L

Packaging Reel

RF & Wireless RF MOSFET Transistors

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Number of Channels 2 Channel

Product Type RF MOSFET Transistors

Standard Pack Qty 250

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 8 V

Vgs th - Gate-Source Threshold Voltage - 2.3 V

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Mfr. Part #: A3G18H500-04SR3