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A3G26H501W17SR3

RF MOSFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 56 W Avg., 48 V

Product Category: RF MOSFET Transistors
Mfr. Part #
A3G26H501W17SR3
Manufacturer: NXP
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: A3G26H501W17SR3 Datasheet
Inventory: In Stock

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Mfr. Part #: A3G26H501W17SR3

Specifications

Specifications

Manufacturer NXP

Technology GaN

Id - Continuous Drain Current 42 mA

Vds - Drain-Source Breakdown Voltage 150 V

Operating Frequency 2496 MHz to 2690 MHz

Gain 13.7 dB

Output Power 56 W

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 225 C

Mounting Style SMD/SMT

Package / Case NI-780S-4S2S

Packaging Reel

RF & Wireless RF MOSFET Transistors

Type RF Power MOSFET

Brand NXP Semiconductors

Product Type RF MOSFET Transistors

Standard Pack Qty 250

Subcategory MOSFETs

Vgs th - Gate-Source Threshold Voltage - 3.5 V, - 3.8 V

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Mfr. Part #: A3G26H501W17SR3