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A5G37H110NT4

RF MOSFET Transistors Airfast RF Power GaN Transistor, 3600 3800 MHz, 13.5 W Avg., 48 V

Product Category: Transistors RF
Mfr. Part #
A5G37H110NT4
Manufacturer: NXP
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: A5G37H110NT4 Datasheet
Inventory: In Stock

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Mfr. Part #: A5G37H110NT4

Specifications

Specifications

Manufacturer NXP

Transistor Polarity Dual N-Channel

Technology GaN Si

Id - Continuous Drain Current 8.7 mA

Vds - Drain-Source Breakdown Voltage 125 V

Operating Frequency 3.6 GHz to 3.8 GHz

Gain 15.1 dB

Output Power 13.5 W

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case DFN-6

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series A5G37H110N

Type RF Power MOSFET

Brand NXP Semiconductors

Number of Channels 2 Channel

Product Type RF MOSFET Transistors

Standard Pack Qty 2500

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 8 V

Vgs th - Gate-Source Threshold Voltage - 4.6 V

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Mfr. Part #: A5G37H110NT4