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ATF-54143-BLKG

RF FET 16.6 dB + 150 C SMD/SMT 2 GHz SOT-343 GaAs N-Channel 5 V

Product Category: RF FETs
Mfr. Part #
ATF-54143-BLKG
Manufacturer: Broadcom
Package: SC-82A, SOT-343
Lead Free Status /RoHS Status:
Data Sheet: ATF-54143-BLKG Datasheet
Inventory: In Stock

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Mfr. Part #: ATF-54143-BLKG

Specifications
Product Details

Specifications

Manufacturer Broadcom

Product Category RF FETs

Packaging Bulk

Mounting-Style SMD/SMT

Package-Case SOT-343

Technology GaAs

Configuration Single Dual Source

Transistor-Type EpHEMT

Gain 16.6 dB

Pd-Power-Dissipation 725 mW

Maximum Operating Temperature + 150 C

Operating-Frequency 2 GHz

ID (drain current) 120 mA

Vds-Drain-Source-Breakdown-Voltage 5 V

Transistor-Polarity N-Channel

Transconductance Transadmittance (or transfer admittance) is the AC equivalent of transconductance.

410 mmho Vgs-Gate-Source-Breakdown-Voltage

- 5 V to 1 V NF-Noise-Figure

0.5 dB P1dB-Compression-Point

Product Details

Description

Avago Technologiesâ€™ ATF-54143 is a high dynamic range, low noise, E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package.
The combination of high gain, high linearity and low noise makes the ATF-54143 ideal for cellular/PCS base stations, MMDS, and other systems in the 450 MHz to 6 GHz frequency range.

Features

â€¢ High linearity performance
â€¢ Enhancement Mode Technology [1]
â€¢ Low noise figure
â€¢ Excellent uniformity in product specifications
â€¢ 800 micron gate width
â€¢ Low cost surface mount small plastic package SOT- 343 (4 lead SC-70)
â€¢ Tape-and-Reel packaging option available
â€¢ Lead-free option available.

Specifi cations

â€¢ 2 GHz; 3V, 60 mA (Typ.)
â€¢ 36.2 dBm output 3rd order intercept
â€¢ 20.4 dBm output power at 1 dB gain compression
â€¢ 0.5 dB noise figure
â€¢ 16.6 dB associated gain

Applications

â€¢ Low noise amplifier for cellular/PCS base stations
â€¢ LNA for WLAN, WLL/RLL and MMDS applications
â€¢ General purpose discrete E -PHEMT for other ultra low noise applications

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Mfr. Part #: ATF-54143-BLKG