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AUIRF7379Q

MOSFET 5.8A, 4.3A N and P-Channel Surface Mount -55Â°C ~ 150Â°C (TJ) 8-SOIC (0.154", 3.90mm Width) 2.5W HEXFETÂ® 30V

Product Category: FETs - Arrays
Mfr. Part #
AUIRF7379Q
Manufacturer: Infineon
Package: 8-SOIC (0.154", 3.90mm Width)
Lead Free Status /RoHS Status:
Data Sheet: AUIRF7379Q Datasheet
Inventory: In Stock

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Mfr. Part #: AUIRF7379Q

Specifications
Product Details

Specifications

Manufacturer Infineon

Product Category FETs - Arrays

Series HEXFETÂ®

Packaging Tube Alternate Packaging

Package-Case 8-SOIC (0.154", 3.90mm Width)

Operating-Temperature -55Â°C ~ 150Â°C (TJ)

Mounting-Type Surface Mount

Supplier-Device-Package 8-SO

FET-Type N and P-Channel

Power-Max 2.5W

VDSS â€“ Drain-Source Voltage 30V

Input Capacitance 520pF @ 25V

FET-Feature Logic Level Gate

Current-Continuous-Drain-Id-25Â°C 5.8A, 4.3A

Rds-On-Max-Id-Vgs 45 mOhm @ 5.8A, 10V

Vgs-th-Max-Id 3V @ 250Î¼A

Gate-Charge-Qg-Vgs 25nC @ 10V

Product Details

Description

Specifically designed for Automotive applications, this cellular design of HEXFETÂ® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features

Advanced Planar Technology
Low On-Resistance
Dual N and P Channel MOSFET
Dynamic dV/dT Rating
150Â°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified*

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Please send inquiry, we will respond immediately.

Mfr. Part #: AUIRF7379Q