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BLA0912-250
Bipolar (BJT) Transistor
- Product Category: RF FETs
- Mfr. Part # BLA0912-250
- Package: SMD
- Lead Free Status /RoHS Status:
- Data Sheet: BLA0912-250 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Please send inquiry,we will respond immediately.
Mfr. Part #: BLA0912-250
- Product Details
Product Details
General description
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.Features
â– High power gainâ– Easy power control
â– Excellent ruggedness
â– Source on mounting base eliminates DC isolators, reducing common mode
inductance.
Applications
â– Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range suchas Mode-S, TCAS and JTIDS, DME or TACAN.
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the BLA0912-250. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: BLA0912-250