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BLC8G27LS-210PV

Product Category: RF FETs
Mfr. Part #
BLC8G27LS-210PV
Package: SMD
Lead Free Status /RoHS Status:
Data Sheet: BLC8G27LS-210PV Datasheet
Inventory: In Stock

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Mfr. Part #: BLC8G27LS-210PV

Product Details

Product Details

General description

200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

Features and benefits

â– Excellent ruggedness
â– High efficiency
â– Low thermal resistance providing excellent thermal stability
â– Decoupling leads to enable improved video bandwidth performance (150 MHz typical)
â– Designed for broadband operation (2500 MHz to 2700 MHz)
â– Lower output capacitance for improved performance in Doherty applications
â– Designed for low memory effects providing excellent pre-distortability
â– Internally matched for ease of use
â– Integrated ESD protection
â– Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

Applications

â– RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range

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Please send inquiry, we will respond immediately.

Mfr. Part #: BLC8G27LS-210PV