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BLF6G20LS-110
- Product Category: RF FETs
- Mfr. Part # BLF6G20LS-110
- Package: SOT502B
- Lead Free Status /RoHS Status:
- Data Sheet: BLF6G20LS-110 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Please send inquiry,we will respond immediately.
Mfr. Part #: BLF6G20LS-110
- Product Details
Product Details
General description
110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Features
â– Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA:â—† Average output power = 25 W
â—† Power gain = 19 dB
â—† Efficiency = 31 %
◆ IMD3 = −37 dBc
◆ ACPR = −40 dBc
â– Easy power control
â– Integrated ESD protection
â– Excellent ruggedness
â– High efficiency
â– Excellent thermal stability
â– Designed for broadband operation (1800 MHz to 2000 MHz)
â– Internally matched for ease of use
â– Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
â– RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MHz frequency rangeICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the BLF6G20LS-110. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: BLF6G20LS-110
