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BLF6G27S-45

Product Category: RF FETs
Mfr. Part #
BLF6G27S-45
Package: SMD
Lead Free Status /RoHS Status:
Data Sheet: BLF6G27S-45 Datasheet
Inventory: In Stock

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Mfr. Part #: BLF6G27S-45

Product Details

Product Details

General description

45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Features

â– Typical 1-carrier N-CDMA performance (single carrier N-CDMA with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an IDq of 350 mA:
â– Qualified up to a maximum VDS operation of 32 V
â– Integrated ESD protection
â– Excellent ruggedness
â– High efficiency
â– Excellent thermal stability
â– Designed for broadband operation
â– Internally matched for ease of use
â– Low gold plating thickness on leads
â– Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

Applications

â– RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range

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Mfr. Part #: BLF6G27S-45