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BLF6G38-10

Product Category: RF FETs
Mfr. Part #
BLF6G38-10
Lead Free Status /RoHS Status:
Data Sheet: BLF6G38-10 Datasheet
Inventory: In Stock

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Mfr. Part #: BLF6G38-10

Product Details

Product Details

General description

10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

Features and benefits

â– Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an IDq of 130 mA:
â– Qualified up to a maximum VDS operation of 32 V
â– Integrated ESD protection
â– Excellent ruggedness
â– High efficiency
â– Excellent thermal stability
â– Designed for broadband operation
â– Internally matched for ease of use
â– Low gold plating thickness on leads
â– Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

Applications

â– RF power amplifiers for base stations and multi carrier applications in the
3400 MHz to 3600 MHz frequency range

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Please send inquiry, we will respond immediately.

Mfr. Part #: BLF6G38-10