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BLF7G10L-250
- Product Category: RF FETs
- Mfr. Part # BLF7G10L-250
- Package: SMD
- Lead Free Status /RoHS Status:
- Data Sheet: BLF7G10L-250 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
-
Please send inquiry,we will respond immediately.
Mfr. Part #: BLF7G10L-250
- Product Details
Product Details
General description
250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.Features and benefits
â– Excellent ruggednessâ– High efficiency
â– Low Rth providing excellent thermal stability
â– Designed for broadband operation (920 MHz to 960 MHz)
â– Lower output capacitance for improved performance in Doherty applications
â– Designed for low memory effects providing excellent pre-distortability
â– Internally matched for ease of use
â– Integrated ESD protection
â– Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Applications
â– RF power amplifiers for W-CDMA base stations and multi carrier applications in the920 MHz to 960 MHz frequency range
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the BLF7G10L-250. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: BLF7G10L-250