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BLF872

TRANSISTOR RF LDMOS SOT800

  • RF FETs
  • BLF872
  • SOT800
  • BLF872 Datasheet
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Mfr. Part #: BLF872

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  • Product Details

Product Details

General description

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Features

■ Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A:
â—† Peak envelope power load power PL(PEP) = 300 W
â—† Gain Gp = 15 dB
◆ Drain efficiency ηD = 43 %
◆ Third order intermodulation distortion IMD3 = −28 dBc
■ Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A:
â—† Average output power PL(AV) = 70 W
â—† Gain Gp = 15 dB
◆ Drain efficiency ηD = 30 %
◆ Third order intermodulation distortion IMD3 = −28 dBc (4.3 MHz from center frequency)
â–  Advanced flange material for optimum thermal behavior and reliability
â–  Excellent ruggedness
â–  High power gain
â–  Designed for broadband operation (UHF band)
â–  Excellent reliability
â–  Internal input and output matching for high gain and optimum broadband operation
â–  Source on underside eliminates DC isolators, reducing common-mode inductance
â–  Easy power control

Applications

â–  Communication transmitter applications in the UHF band
â–  Industrial applications in the UHF band

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the BLF872. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: BLF872

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