wholesale FGY75T120SWD IGBT Transistors supplier,manufacturer,distributor

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FGY75T120SWD

IGBT Transistors 1200V, 75A Field Stop VII Discrete IGBT in Power TO247-3L Packaging

  • IGBT Transistors
  • FGY75T120SWD
  • onsemi
  • Tube
  • FGY75T120SWD Datasheet
  • In Stock
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Mfr. Part #: FGY75T120SWD

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  • Specifications

Specifications

Manufacturer onsemi
RoHS
Technology Si
Package / Case TO-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.68 V
Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 150 A
Pd - Power Dissipation 503 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Packaging Tube
Continuous Collector Current Ic Max 150 A
Brand onsemi
Gate-Emitter Leakage Current 400 nA
Product Type IGBT Transistors
Standard Pack Qty 30
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the FGY75T120SWD. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: FGY75T120SWD

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