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G10N120BN
IGBT 1200V 35A 298W TO247
- Product Category: IGBTs - Single
- Mfr. Part # G10N120BN
- Package: TO-247-3
- Lead Free Status /RoHS Status:
- Data Sheet: G10N120BN Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Mfr. Part #: G10N120BN
- Product Details
Product Details
The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor
Features
• 35A, 1200V, TC = 25oC• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
Temperature Compensating SABERâ„¢ Model
www.fairchildsemi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the G10N120BN. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: G10N120BN
