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G4BC30F-S

Product Category: IGBTs - Single
Mfr. Part #
G4BC30F-S
Package: SOT-263
Lead Free Status /RoHS Status:
Data Sheet: G4BC30F-S Datasheet
Inventory: In Stock

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Mfr. Part #: G4BC30F-S

Product Details

Product Details

VCES= 600V

VCE(on) typ. =1.59V
@VGE= 15V, IC= 17A

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

â€¢ Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).
â€¢ Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
â€¢ IGBT co-packaged with HEXFREDâ„¢ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
â€¢ Industry standard TO-220AB package

Benefits

â€¢ Generation -4 IGBT's offer highest efficiencies available
â€¢ IGBT's optimized for specific application conditions
â€¢ HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
â€¢ Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's

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Please send inquiry, we will respond immediately.

Mfr. Part #: G4BC30F-S