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GTRA362002FCV1R2

RF JFET Transistors 200W GaN HEMT 48V 3400 to 3600MHz

Product Category: Transistors RF
Mfr. Part #
GTRA362002FC-V1-R2
Manufacturer: Wolfspeed
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: GTRA362002FC-V1-R2 Datasheet
Inventory: In Stock

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Mfr. Part #: GTRA362002FC-V1-R2

Specifications

Specifications

Manufacturer Wolfspeed

Transistor Type HEMT

Technology GaN-on-SiC

Operating Frequency 3.4 GHz to 3.6 GHz

Gain 13.5 dB

Transistor Polarity N-Channel

Vds - Drain-Source Breakdown Voltage 125 V

Vgs - Gate-Source Breakdown Voltage - 10 V to 2 V

Id - Continuous Drain Current 4.1 A

Output Power 200 W

Maximum Drain Gate Voltage -

Minimum Operating Temperature -

Maximum Operating Temperature + 225 C

Pd - Power Dissipation -

Mounting Style Flange Mount

Package / Case H-37248C-4

Packaging Reel

RF & Wireless RF JFET Transistors

Application Cellular Power Amplifier

Brand Wolfspeed

Forward Transconductance - Min -

Product Type RF JFET Transistors

Standard Pack Qty 250

Subcategory Transistors

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Mfr. Part #: GTRA362002FC-V1-R2