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HGT1S3N60A4DS
IGBT 600V 17A 70W D2PAK
- Product Category: IGBTs - Single
- Mfr. Part # HGT1S3N60A4DS
- Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Lead Free Status /RoHS Status:
- Data Sheet: HGT1S3N60A4DS Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Please send inquiry,we will respond immediately.
Mfr. Part #: HGT1S3N60A4DS
- Product Details
Product Details
The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used in anti-parallel is the development type TA49369.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.Features
• >100kHz Operation At 390V, 3A• 200kHz Operation At 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model www.intersil.com
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the HGT1S3N60A4DS. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: HGT1S3N60A4DS
