wholesale HGTG18N120BN IGBTs - Single supplier,manufacturer,distributor

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HGTG18N120BN

IGBT 54A NPT Through Hole 390W TO-247 1200V

  • IGBTs - Single
  • HGTG18N120BN
  • onsemi
  • TO-247-3
  • HGTG18N120BN Datasheet
  • In Stock
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Mfr. Part #: HGTG18N120BN

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  • Specifications
  • Product Details

Specifications

Manufacturer onsemi
Product Category IGBTs - Single
Series -
Packaging Tube
Package-Case TO-247-3
Input-Type Standard
Mounting-Type Through Hole
Supplier-Device-Package TO-247
Power-Max 390W
Reverse-Recovery-Time-trr -
Electric current collectors 54A
Voltage-Collector-Emitter-Breakdown-Max 1200V
IGBT-Type NPT
Current-Collector-Pulsed-Icm 165A
Vce-on-Max-Vge-Ic 2.7V @ 15V, 18A
Switching-Energy 800μJ (on), 1.8mJ (off)
Total Gate Charge 165nC
Td-on-off-25°C 23ns/170ns
Test-Condition 960V, 18A, 3 Ohm, 15V

Product Details

The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

Features

• 54A, 1200V, TC = 25°C
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model www.intersil.com

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the HGTG18N120BN. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: HGTG18N120BN

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