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HGTG18N120BND

IGBT 54A NPT Through Hole 390W 75ns TO-247 1200V

Product Category: IGBTs - Single
Mfr. Part #
HGTG18N120BND
Manufacturer: ON Semiconductor
Package: TO-247
Lead Free Status /RoHS Status:
Data Sheet: HGTG18N120BND Datasheet
Inventory: In Stock

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Mfr. Part #: HGTG18N120BND

Specifications
Product Details

Specifications

Manufacturer ON Semiconductor

Product Category IGBTs - Single

Series -

Packaging Tube

Part-Aliases HGTG18N120BND_NL

Unit-Weight 0.225401 oz

Mounting-Style Through Hole

Package-Case TO-247-3

Input-Type Standard

Mounting-Type Through Hole

Supplier-Device-Package TO-247

Configuration Single

Power-Max 390W

Reverse-Recovery-Time-trr 75ns

Electric current collectors 54A

Voltage-Collector-Emitter-Breakdown-Max 1200V

IGBT-Type NPT

Current-Collector-Pulsed-Icm 160A

Vce-on-Max-Vge-Ic 2.7V @ 15V, 18A

Switching-Energy 1.9mJ (on), 1.8mJ (off)

Total Gate Charge 165nC

Td-on-off-25Â°C 23ns/170ns

Test-Condition 960V, 18A, 3 Ohm, 15V

Pd-Power-Dissipation 390 W

Maximum Operating Temperature + 150 C

Operating temperature range - 55 C

Collector-Emitter-Voltage-VCEO-Max 1200 V

Collector-Emitter-Saturation-Voltage 2.45 V

Continuous-Collector-Current-at-25-C 54 A

Gate-Emitter-Leakage-Current +/- 250 nA

Maximum-Gate-Emitter-Voltage +/- 20 V

Continuous-Collector-Current-Ic-Max 54 A

Product Details

The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.

Features

â€¢ 54A, 1200V, TC = 25Â°C
â€¢ 1200V Switching SOA Capability
â€¢ Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150Â°C
â€¢ Short Circuit Rating
â€¢ Low Conduction Loss

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Mfr. Part #: HGTG18N120BND