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IRF7338PBF

MOSFET 6.3A, 3A N and P-Channel Surface Mount -55Â°C ~ 150Â°C (TJ) 8-SOIC (0.154", 3.90mm Width) 2W HEXFETÂ® 12V

Product Category: FETs - Arrays
Mfr. Part #
IRF7338PBF
Manufacturer: Infineon
Package: 8-SOIC (0.154", 3.90mm Width)
Lead Free Status /RoHS Status:
Data Sheet: IRF7338PBF Datasheet
Inventory: In Stock

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Mfr. Part #: IRF7338PBF

Specifications
Product Details

Specifications

Manufacturer Infineon

Product Category FETs - Arrays

Series HEXFETÂ®

Packaging Tube

Package-Case 8-SOIC (0.154", 3.90mm Width)

Operating-Temperature -55Â°C ~ 150Â°C (TJ)

Mounting-Type Surface Mount

Supplier-Device-Package 8-SO

FET-Type N and P-Channel

Power-Max 2W

VDSS â€“ Drain-Source Voltage 12V

Input Capacitance 640pF @ 9V

FET-Feature Logic Level Gate

Current-Continuous-Drain-Id-25Â°C 6.3A, 3A

Rds-On-Max-Id-Vgs 34 mOhm @ 6A, 4.5V

Vgs-th-Max-Id 1.5V @ 250Î¼A

Gate-Charge-Qg-Vgs 8.6nC @ 4.5V

Product Details

Description

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique

â— Ultra Low On-Resistance

â— Dual N and P Channel MOSFET
â— Surface Mount
â— Available in Tape & Reel

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Please send inquiry, we will respond immediately.

Mfr. Part #: IRF7338PBF

IRF7338PBF

Description

â— Ultra Low On-Resistance

â— Ultra Low On-Resistance