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IRF7350TRPBF

MOSFET 2.1A, 1.5A N and P-Channel Surface Mount -55Â°C ~ 150Â°C (TJ) 8-SOIC (0.154", 3.90mm Width) 2W HEXFETÂ® 100V

Product Category: FETs - Arrays
Mfr. Part #
IRF7350TRPBF
Manufacturer: Infineon
Package: 8-SOIC (0.154", 3.90mm Width)
Lead Free Status /RoHS Status:
Data Sheet: IRF7350TRPBF Datasheet
Inventory: In Stock

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Mfr. Part #: IRF7350TRPBF

Specifications
Product Details

Specifications

Manufacturer Infineon

Product Category FETs - Arrays

Series HEXFETÂ®

Packaging Package-Case

8-SOIC (0.154", 3.90mm Width) Operating-Temperature

-55Â°C ~ 150Â°C (TJ) Mounting-Type

Surface Mount Supplier-Device-Package

8-SO FET-Type

N and P-Channel Power-Max

2W VDSS â€“ Drain-Source Voltage

100V Input Capacitance

380pF @ 25V FET-Feature

Standard Current-Continuous-Drain-Id-25Â°C

2.1A, 1.5A Rds-On-Max-Id-Vgs

210 mOhm @ 2.1A, 10V Vgs-th-Max-Id

4V @ 250Î¼A Gate-Charge-Qg-Vgs

Product Details

Description

These dual N and P channel HEXFETÂ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFETÂ® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in DC motor drives and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

â— Ultra Low On-Resistance

â— Dual N and P Channel MOSFET
â— Surface Mount
â— Available in Tape and Reel
â— Lead-Free

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Please send inquiry, we will respond immediately.

Mfr. Part #: IRF7350TRPBF

IRF7350TRPBF

Description

â— Ultra Low On-Resistance

â— Ultra Low On-Resistance