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IRF9952QTRPBF
MOSFET 3.5A, 2.3A N and P-Channel Surface Mount -55°C ~ 150°C (TJ) 8-SOIC (0.154", 3.90mm Width) 2W HEXFET® 30V
- Product Category: FETs - Arrays
- Mfr. Part # IRF9952QTRPBF
- Manufacturer: Infineon
- Package: 8-SOIC (0.154", 3.90mm Width)
- Lead Free Status /RoHS Status:
- Data Sheet: IRF9952QTRPBF Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
-
Please send inquiry,we will respond immediately.
Mfr. Part #: IRF9952QTRPBF
- Specifications
- Product Details
Specifications
Product Details
Description
These HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
â— Advanced Process Technology
â— Ultra Low On-Resistanceâ— Dual N and P Channel MOSFET
â— Surface Mount
â— Available in Tape & Reel
◠150°C Operating Temperature
â— Lead-Free
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IRF9952QTRPBF. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: IRF9952QTRPBF
