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IRF9953TRPBF

MOSFET 2.3A 2 P-Channel (Dual) Surface Mount -55Â°C ~ 150Â°C (TJ) 8-SOIC (0.154", 3.90mm Width) 2W HEXFETÂ® 30V

Product Category: FETs - Arrays
Mfr. Part #
IRF9953TRPBF
Manufacturer: Infineon
Package: 8-SOIC (0.154", 3.90mm Width)
Lead Free Status /RoHS Status:
Data Sheet: IRF9953TRPBF Datasheet
Inventory: In Stock

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Mfr. Part #: IRF9953TRPBF

Specifications
Product Details

Specifications

Manufacturer Infineon

Product Category FETs - Arrays

Series HEXFETÂ®

Packaging Alternate Packaging

Unit-Weight 0.019048 oz

Mounting-Style SMD/SMT

Package-Case 8-SOIC (0.154", 3.90mm Width)

Technology Si

Operating-Temperature -55Â°C ~ 150Â°C (TJ)

Mounting-Type Surface Mount

Number-of-Channels 2 Channel

Supplier-Device-Package 8-SO

Configuration Dual

FET-Type 2 P-Channel (Dual)

Power-Max 2W

Transistor-Type 2 P-Channel

VDSS â€“ Drain-Source Voltage 30V

Input Capacitance 190pF @ 15V

FET-Feature Standard

Current-Continuous-Drain-Id-25Â°C 2.3A

Rds-On-Max-Id-Vgs 250 mOhm @ 1A, 10V

Vgs-th-Max-Id 1V @ 250Î¼A

Gate-Charge-Qg-Vgs 12nC @ 10V

Pd-Power-Dissipation 2 W

Vgs-Gate-Source-Voltage 20 V

ID (drain current) - 2.3 A

Vds-Drain-Source-Breakdown-Voltage - 30 V

Rds-On-Drain-Source-Resistance 165 mOhms

Transistor-Polarity P-Channel

Qg-Gate-Charge 6.9 nC

Product Details

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

â— Generation V Technology

â— Ultra Low On-Resistance
â— Dual P-Channel MOSFET
â— Surface Mount
â— Very Low Gate Charge and Switching Losses
â— Fully Avalanche Rated
â— Lead-Free

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Please send inquiry, we will respond immediately.

Mfr. Part #: IRF9953TRPBF

IRF9953TRPBF

Description

â— Generation V Technology

â— Generation V Technology