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IRFP460C

MOSFET N-CH 500V 20A TO-3P

Product Category: FETs - Single
Mfr. Part #
IRFP460C
Manufacturer: Fairchild Semiconductor
Package: TO-3P-3, SC-65-3
Lead Free Status /RoHS Status:
Data Sheet: IRFP460C Datasheet
Inventory: In Stock

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Mfr. Part #: IRFP460C

Specifications
Product Details

Specifications

Manufacturer Fairchild Semiconductor

Product Category FETs - Single

Categories Transistors - FETs, MOSFETs - Single

Manufacturer ON Semiconductor

Series -

Packaging Tube

Part-Status Obsolete

FET-Type N-Channel

Technology MOSFET (Metal Oxide)

Drain-to-Source-Voltage-Vdss 500V

Current-Continuous-Drain-Id-25Â°C 20A (Tc)

Drive-Voltage-Max-Rds-On-Min-Rds-On 10V

Vgs-th-Max-Id 4V @ 250?A

Gate-Charge-Qg-Max-Vgs 170nC @ 10V

Vgs-Max Â±30V

Input-Capacitance-Ciss-Max-Vds 6000pF @ 25V

FET-Feature -

Power-Dissipation-Max 235W (Tc)

Rds-On-Max-Id-Vgs 240 mOhm @ 10A, 10V

Operating-Temperature -55Â°C ~ 150Â°C (TJ)

Mounting-Type Through Hole

Supplier-Device-Package TO-3PN

Package-Case TO-3P-3, SC-65-3

Product Details

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchildâ€™s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and power factor corrections.

Features

â€¢ 20A, 500V, RDS(on) = 0.24â„¦ @VGS = 10 V
â€¢ Low gate charge ( typical 130nC)
â€¢ Low Crss ( typical 60 pF)
â€¢ Fast switching
â€¢ 100% avalanche tested
â€¢ Improved dv/dt capability

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Please send inquiry, we will respond immediately.

Mfr. Part #: IRFP460C