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IXFN230N10

Discrete Semiconductor Modules 230 Amps 100V 0.006 Rds

Product Category: Discrete Semiconductor Modules
Mfr. Part #
IXFN230N10
Manufacturer: IXYS
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: IXFN230N10 Datasheet
Inventory: In Stock

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Mfr. Part #: IXFN230N10

Specifications

Specifications

Manufacturer IXYS

Product Power MOSFET Modules

Type HiperFET

Technology Si

Vgs - Gate-Source Voltage - 20 V, + 20 V

Mounting Style Screw Mounts

Package / Case SOT-227-4

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Series HiPerFET

Packaging Tube

Configuration Single

Height 9.6 mm

Length 38.23 mm

Width 25.42 mm

Brand IXYS

Number of Channels 1 Channel

Transistor Polarity N-Channel

Fall Time 60 ns

Id - Continuous Drain Current 230 A

Pd - Power Dissipation 700 W

Product Type Discrete Semiconductor Modules

Rds On - Drain-Source Resistance 6.5 mOhms

Rise Time 150 ns

Standard Pack Qty 10

Subcategory Discrete Semiconductor Modules

Tradename HyperFET

Typical Turn-Off Delay Time 112 ns

Typical Turn-On Delay Time 40 ns

Vds - Drain-Source Breakdown Voltage 100 V

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFN230N10