wholesale IXFN240N15T2 Discrete Semiconductor Modules supplier,manufacturer,distributor

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IXFN240N15T2

Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET

  • Discrete Semiconductor Modules
  • IXFN240N15T2
  • IXYS
  • Tube
  • IXFN240N15T2 Datasheet
  • In Stock
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  • Quantity:
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Mfr. Part #: IXFN240N15T2

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Type GigaMOS Trench T2 HiperFet
Technology Si
Vgs - Gate-Source Voltage - 20 V, + 20 V
Mounting Style Chassis Mount
Package / Case SOT-227-4
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series IXFN240N15
Packaging Tube
Brand IXYS
Transistor Polarity N-Channel
Fall Time 145 ns
Id - Continuous Drain Current 240 A
Pd - Power Dissipation 830 W
Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 5.2 mOhms
Rise Time 125 ns
Standard Pack Qty 10
Subcategory Discrete Semiconductor Modules
Tradename HiPerFET
Typical Turn-Off Delay Time 77 ns
Typical Turn-On Delay Time 48 ns
Vds - Drain-Source Breakdown Voltage 150 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFN240N15T2. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXFN240N15T2

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