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IXFY26N30X3

MOSFET MSFT N-CH ULTRA JNCT X3 3&44

  • MOSFET
  • IXFY26N30X3
  • IXYS
  • Tube
  • IXFY26N30X3 Datasheet
  • In Stock
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Mfr. Part #: IXFY26N30X3

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Mounting Style SMD/SMT
Package / Case TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 300 V
Id - Continuous Drain Current 26 A
Rds On - Drain-Source Resistance 66 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 22 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 170 W
Channel Mode Enhancement
Tradename HiPerFET
Series HiPerFET
Packaging Tube
Configuration Single
Transistor Type 1 N-Channel
Brand IXYS
Forward Transconductance - Min 14 S
Fall Time 19 ns
Product Type MOSFET
Rise Time 25 ns
Standard Pack Qty 70
Subcategory MOSFETs
Typical Turn-Off Delay Time 80 ns
Typical Turn-On Delay Time 23 ns

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXFY26N30X3. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IXFY26N30X3

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