wholesale MAT01GHZ Transistors (BJT) - Arrays supplier,manufacturer,distributor

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MAT01GHZ

BJT Array 25mA 450MHz Through Hole 500mW MAT01 TO-78-6 2 NPN (Dual) Matched Pair 45V

  • Transistors (BJT) - Arrays
  • MAT01GHZ
  • Analog Devices
  • TO-78-6 Metal Can
  • MAT01GHZ Datasheet
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Mfr. Part #: MAT01GHZ

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  • Specifications
  • Product Details

Specifications

Manufacturer Analog Devices
Product Category Transistors (BJT) - Arrays
Series MAT01
Packaging Tube
Mounting-Style Through Hole
Package-Case TO-78-6 Metal Can
Mounting-Type Through Hole
Supplier-Device-Package TO-78-6
Configuration Dual
Power-Max 500mW
Transistor-Type 2 NPN (Dual) Matched Pair
Electric current collectors 25mA
Voltage-Collector-Emitter-Breakdown-Max 45V
DC-Current-Gain-hFE-Min-Ic-Vce -
Vce saturation 800mV @ 1mA, 10mA
Current-Collector-Cutoff-Max 400nA
Frequency-Transition 450MHz
Pd-Power-Dissipation 500 mW
Maximum Operating Temperature + 125 C
Operating temperature range - 55 C
Collector-Emitter-Voltage-VCEO-Max 45 V
Transistor-Polarity NPN
Collector-Emitter-Saturation-Voltage 0.12 V
Collector-Base-Voltage-VCBO 45 V
Emitter-Base-Voltage-VEBO 5 V
Maximum-DC-Collector-Current 25 mA
Gain-Bandwidth-Product-fT 450 MHz
Continuous-Collector-Current 25 mA
DC-Collector-Base-Gain-hfe-Min 250
DC-Current-Gain-hFE-Max 610

Product Details

GENERAL DESCRIPTION

The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7%. High hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages.

FEATURES

Low VOS (VBE match): 40 µV typical, 100 µV maximum
Low TCVOS: 0.5 µV/°C maximum
High hFE: 500 minimum
Excellent hFE linearity from 10 nA to 10 mA
Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz
High breakdown: 45 V min

APPLICATIONS

Weigh scales
Low noise, op amp, front end
Current mirror and current sink/source
Low noise instrumentation amplifiers
Voltage controlled attenuators
Log amplifiers

 

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MAT01GHZ. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: MAT01GHZ

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