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MAT03FHZ

BJT Array 20mA 190MHz Through Hole 500mW MAT03 TO-78-6 2 PNP (Dual) 36V

Product Category: Transistors (BJT) - Arrays
Mfr. Part #
MAT03FHZ
Manufacturer: Analog Devices
Package: TO-78-6 Metal Can
Lead Free Status /RoHS Status:
Data Sheet: MAT03FHZ Datasheet
Inventory: In Stock

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Mfr. Part #: MAT03FHZ

Specifications
Product Details

Specifications

Manufacturer Analog Devices

Product Category Transistors (BJT) - Arrays

Series MAT03

Packaging Tube

Mounting-Style Through Hole

Package-Case TO-78-6 Metal Can

Mounting-Type Through Hole

Supplier-Device-Package TO-78-6

Configuration Dual

Power-Max 500mW

Transistor-Type 2 PNP (Dual)

Electric current collectors 20mA

Voltage-Collector-Emitter-Breakdown-Max 36V

DC-Current-Gain-hFE-Min-Ic-Vce -

Vce saturation 100mV @ 100Î¼A, 1mA

Current-Collector-Cutoff-Max -

Frequency-Transition 190MHz

Pd-Power-Dissipation 500 mW

Maximum Operating Temperature + 85 C

Operating temperature range - 40 C

Collector-Emitter-Voltage-VCEO-Max 36 V

Transistor-Polarity PNP

Collector-Emitter-Saturation-Voltage 0.025 V

Collector-Base-Voltage-VCBO 36 V

Emitter-Base-Voltage-VEBO 36 V

Maximum-DC-Collector-Current 20 mA

Gain-Bandwidth-Product-fT 190 MHz

Continuous-Collector-Current 20 mA

DC-Collector-Base-Gain-hfe-Min 40

DC-Current-Gain-hFE-Max 120

Product Details

GENERAL DESCRIPTION

The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/âˆšHz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 ÂµV max), makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 â„¦) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance.
Each transistor is individually tested to data sheet specifications. Device performance is guaranteed at 25Â°C and over the extended industrial and military temperature ranges. To insure the long term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base emitter junction potential. This prevents a base-emitter break down condition which can result in degradation of gain and matching performance due to excessive breakdown current.

FEATURES

Dual Matched PNP Transistor
Low Offset Voltage: 100 mV max
Low Noise: 1 nV/âˆšHz @ 1 kHz max
High Gain: 100 min
High Gain Bandwidth: 190 MHz typ
Tight Gain Matching: 3% max
Excellent Logarithmic Conformance: rBE = 0.3 Î© typ
Available in Die F

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Mfr. Part #: MAT03FHZ