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MMRF1312GSR5

RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V

Product Category: Transistors RF
Mfr. Part #
MMRF1312GSR5
Manufacturer: NXP
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: MMRF1312GSR5 Datasheet
Inventory: In Stock

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Mfr. Part #: MMRF1312GSR5

Specifications

Specifications

Manufacturer NXP

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 2.6 A

Vds - Drain-Source Breakdown Voltage - 500 mV, 112 V

Operating Frequency 900 MHz to 1.215 GHz

Gain 19.6 dB

Output Power 1 kW

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case NI-1230GS-4L-4

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series MMRF1312

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Number of Channels 2 Channel

Pd - Power Dissipation 1.053 kW

Product Type RF MOSFET Transistors

Standard Pack Qty 50

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage 1.8 V

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Mfr. Part #: MMRF1312GSR5