Image is for illustrative purposes only. Please refer to product description.
MRF5S19100HS
- Product Category: RF FETs
- Mfr. Part # MRF5S19100HS
- Package: SMD
- Lead Free Status /RoHS Status:
- Data Sheet: MRF5S19100HS Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
-
Please send inquiry,we will respond immediately.
Mfr. Part #: MRF5S19100HS
- Product Details
Product Details
The RF MOSFET Line
RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts,
IDQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band. IS-95 (Pilot,Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 13.9 dB
Drain Efficiency — 25.5%
IM3 @ 2.5 MHz Offset — -36.5 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — -50.7 dBc @ 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF5S19100HS. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MRF5S19100HS
