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MRF5S21090HR3

MOSFET RF N-CHAN 28V 19W NI-780

Product Category: RF FETs
Mfr. Part #
MRF5S21090HR3
Manufacturer: Texas Instruments
Package: NI-780
Lead Free Status /RoHS Status:
Data Sheet: MRF5S21090HR3 Datasheet
Inventory: In Stock

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Mfr. Part #: MRF5S21090HR3

Specifications
Product Details

Specifications

Manufacturer Texas Instruments

Product Category RF FETs

Categories Transistors - FETs, MOSFETs - RF

Manufacturer NXP USA Inc.

Series -

Packaging Tape & Reel (TR)

Part-Status Obsolete

Transistor-Type LDMOS

Frequency 2.11GHz

Gain 14.5dB

Voltage-Test 28V

Current-Rating -

Noise-Figure -

Current-Test 850mA

Power-Output 19W

Voltage-Rated 65V

Package-Case NI-780

Supplier-Device-Package NI-780

Base-Part-Number MRF5S21090

Product Details

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

â€¢ Typical 2-carrier W-CDMA Performance: VDD = 28 Volts, IDQ =

850 mA, Pout = 19 Watts Avg., Full Frequency Band, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain â€” 14.5 dB
Drain Efficiency â€” 26%
IM3 @ 10 MHz Offset â€” -37.5 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset â€” -40.5 dBc @ 3.84 MHz Channel Bandwidth
â€¢ Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power
â€¢ Characterized with Series Equivalent Large-Signal Impedance Parameters
â€¢ Internally Matched, Controlled Q, for Ease of Use
â€¢ Qualified Up to a Maximum of 32 VDD Operation
â€¢ Integrated ESD Protection
â€¢ Lower Thermal Resistance Package
â€¢ Low Gold Plating Thickness on Leads, 40Âµâ€³ Nominal.
â€¢ In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

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Mfr. Part #: MRF5S21090HR3