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MRF5S9080NBR1

RF FET + 150 C SMD/SMT TO-272 WB EP Si N-Channel 65 V

Product Category: RF FETs
Mfr. Part #
MRF5S9080NBR1
Manufacturer: Freescale / NXP
Package: TO-272BB
Lead Free Status /RoHS Status:
Data Sheet: MRF5S9080NBR1 Datasheet
Inventory: In Stock

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Mfr. Part #: MRF5S9080NBR1

Specifications
Product Details

Specifications

Manufacturer Freescale / NXP

Product Category RF FETs

Series MRF5S9080N

Packaging Reel

Unit-Weight 0.067412 oz

Mounting-Style SMD/SMT

Package-Case TO-272 WB EP

Technology Si

Maximum Operating Temperature + 150 C

Operating temperature range - 65 C

Vgs-Gate-Source-Voltage - 0.5 V 15 V

Vds-Drain-Source-Breakdown-Voltage 65 V

Transistor-Polarity N-Channel

Product Details

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

GSM Application

â€¢ Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts CW, Full Frequency Band (869-894 MHz or 921-960 MHz).
Power Gain â€” 18.5 dB
Drain Efficiency â€” 60%

GSM EDGE Application

â€¢ Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA, Pout = 36 Watts Avg., Full Frequency Band (869-894 MHz or 921-960 MHz).
Power Gain â€” 19 dB
Drain Efficiency â€” 42%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM â€” 2.5% rms
â€¢ Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW Output Power

Features

â€¢ Characterized with Series Equivalent Large-Signal Impedance Parameters
â€¢ Internally Matched for Ease of Use
â€¢ Qualified Up to a Maximum of 32 VDD Operation
â€¢ Integrated ESD Protection
â€¢ 200C Capable Plastic Package
â€¢ RoHS Compliant
â€¢ In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

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Mfr. Part #: MRF5S9080NBR1