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MRF6S19100GNR1

Chassis Mount Resistor Epoxy Coated Thick Film Flanges -55Â°C ~ 150Â°C Box Â±5% 600W

Product Category: RF FETs
Mfr. Part #
MRF6S19100GNR1
Manufacturer: Freescale / NXP
Package: TO-270-2 Gull Wing
Lead Free Status /RoHS Status:
Data Sheet: MRF6S19100GNR1 Datasheet
Inventory: In Stock

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Mfr. Part #: MRF6S19100GNR1

Specifications
Product Details

Specifications

Manufacturer Freescale / NXP

Product Category RF FETs

Categories Transistors - FETs, MOSFETs - RF

Manufacturer NXP USA Inc.

Series -

Packaging Tape & Reel (TR)

Part-Status Obsolete

Transistor-Type LDMOS

Frequency 1.99GHz

Gain 14.5dB

Voltage-Test 28V

Current-Rating -

Noise-Figure -

Current-Test 950mA

Power-Output 22W

Voltage-Rated 68V

Package-Case TO-270BA

Supplier-Device-Package TO-270-2 GULL

Base-Part-Number MRF6S19100

Product Details

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

â€¢ Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 900 mA,

Pout = 22 Watts Avg., f = 1987 MHz, IS-95 (Pilot, Sync, Paging, Traffic
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB
@ 0.01% Probability on CCDF.
Power Gain â€” 16.1 dB
Drain Efficiency â€” 28% IM3 @ 2.5 MHz Offset â€” -37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset â€” -51 dBc in 30 kHz Channel Bandwidth
â€¢ Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power

Features

â€¢ Characterized with Series Equivalent Large-Signal Impedance Parameters
â€¢ Internally Matched for Ease of Use
â€¢ Qualified Up to a Maximum of 32 VDD Operation
â€¢ Integrated ESD Protection
â€¢ Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
â€¢ RoHS Compliant
â€¢ In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

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Mfr. Part #: MRF6S19100GNR1