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MRF6S19100HR3
MOSFET RF N-CHAN 28V 22W NI-780
- Product Category: RF FETs
- Mfr. Part # MRF6S19100HR3
- Manufacturer: Freescale / NXP
- Package: NI-780
- Lead Free Status /RoHS Status:
- Data Sheet: MRF6S19100HR3 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
-
Please send inquiry,we will respond immediately.
Mfr. Part #: MRF6S19100HR3
- Product Details
Product Details
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETsDesigned for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 900 mA,
Pout = 22 Watts Avg., Full Frequency Band, IS-95 (Pilot, Sync, Paging,Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16.1 dB
Drain Efficiency — 28%
IM3 @ 2.5 MHz Offset — -37 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — -51 dBc @ 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Input and Output Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• Pb-Free and RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
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Please send inquiry, we will respond immediately.
Mfr. Part #: MRF6S19100HR3
