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MRF8P8300HS

Product Category: RF FETs
Mfr. Part #
MRF8P8300HS
Package: TUBE
Lead Free Status /RoHS Status:
Data Sheet: MRF8P8300HS Datasheet
Inventory: In Stock

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Mfr. Part #: MRF8P8300HS

Product Details

Product Details

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for W--CDMA and LTE base station applications with frequencies from 790 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

â€¢ Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =

2000 mA, Pout = 96 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
â€¢ Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
â€¢ Typical Pout @ 1 dB Compression Point â‰ƒ 340 Watts CW

Features

â€¢ 100% PAR Tested for Guaranteed Output Power Capability
â€¢ Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
â€¢ Internally Matched for Ease of Use
â€¢ Integrated ESD Protection
â€¢ Greater Negative Gate--Source Voltage Range for Improved Class C Operation
â€¢ Designed for Digital Predistortion Error Correction Systems
â€¢ Optimized for Doherty Applications
â€¢ RoHS Compliant
â€¢ In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 14.

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Please send inquiry, we will respond immediately.

Mfr. Part #: MRF8P8300HS