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MRF8S21120HS
FET RF N-CH 2.1GHZ 28V NI780HS
- Product Category: RF FETs
- Mfr. Part # MRF8S21120HS
- Package: NI-780S
- Lead Free Status /RoHS Status:
- Data Sheet: MRF8S21120HS Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Please send inquiry,we will respond immediately.
Mfr. Part #: MRF8S21120HS
- Product Details
Product Details
920--960 MHz, 58 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET
Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Features
• 100% PAR Tested for Guaranteed Output Power Capability• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF8S21120HS. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MRF8S21120HS
