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MRF8S9100H

Product Category: RF FETs
Mfr. Part #
MRF8S9100H
Package: NI-780H
Lead Free Status /RoHS Status:
Data Sheet: MRF8S9100H Datasheet
Inventory: In Stock

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Mfr. Part #: MRF8S9100H

Product Details

Product Details

865--960 MHz, 28 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET

Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

â€¢ Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

â€¢ Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
â€¢ Typical Pout @ 1 dB Compression Point â‰ƒ 100 Watts CW

Features

â€¢ 100% PAR Tested for Guaranteed Output Power Capability
â€¢ Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
â€¢ Internally Matched for Ease of Use
â€¢ Integrated ESD Protection
â€¢ Greater Negative Gate--Source Voltage Range for Improved Class C Operation
â€¢ Designed for Digital Predistortion Error Correction Systems
â€¢ Optimized for Doherty Applications
â€¢ 225Â°C Capable Plastic Package
â€¢ RoHS Compliant
â€¢ In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

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Please send inquiry, we will respond immediately.

Mfr. Part #: MRF8S9100H