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MRF8VP13350GNR3

RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V

Product Category: Transistors RF
Mfr. Part #
MRF8VP13350GNR3
Manufacturer: NXP
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: MRF8VP13350GNR3 Datasheet
Inventory: In Stock

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Mfr. Part #: MRF8VP13350GNR3

Specifications

Specifications

Manufacturer NXP

Transistor Polarity Dual N-Channel

Technology Si

Id - Continuous Drain Current 1.3 A

Vds - Drain-Source Breakdown Voltage - 500 mV, 100 V

Operating Frequency 700 MHz to 1.3 GHz

Gain 19.2 dB

Output Power 350 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case OM-780G-4

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series MRF8VP13350N

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Number of Channels 2 Channel

Product Type RF MOSFET Transistors

Standard Pack Qty 250

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage 1.3 V

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Mfr. Part #: MRF8VP13350GNR3