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MRF9030LS
- Product Category: RF FETs
- Mfr. Part # MRF9030LS
- Package: NA
- Lead Free Status /RoHS Status:
- Data Sheet: MRF9030LS Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Mfr. Part #: MRF9030LS
- Product Details
Product Details
The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors
N- Channel Enhancement - Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applications in 26 volt base station equipment.
• Typical Two- Tone Performance at 945 MHz, 26 Volts Output Power ó 30 Watts PEP
Power Gain - 19 dB
Efficiency - 41.5%
IMD - -32.5 dBc
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large- Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF9030LS. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
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Please send inquiry, we will respond immediately.
Mfr. Part #: MRF9030LS
