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MRFG35010ANT1

RF FET 10 dB + 150 C SMD/SMT 3.55 GHz PLD-1.5 GaAs 15 V

Product Category: RF FETs
Mfr. Part #
MRFG35010ANT1
Manufacturer: Freescale / NXP
Package: PLD-1.5
Lead Free Status /RoHS Status:
Data Sheet: MRFG35010ANT1 Datasheet
Inventory: In Stock

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Mfr. Part #: MRFG35010ANT1

Specifications
Product Details

Specifications

Manufacturer Freescale / NXP

Product Category RF FETs

Series MRFG35010ANT1

Packaging Reel

Unit-Weight 0.009877 oz

Mounting-Style SMD/SMT

Package-Case PLD-1.5

Technology GaAs

Configuration Single Dual Source

Transistor-Type pHEMT

Gain 10 dB

Maximum Operating Temperature + 150 C

Operating-Frequency 3.55 GHz

ID (drain current) 2.9 A

Vds-Drain-Source-Breakdown-Voltage 15 V

Vgs-Gate-Source-Breakdown-Voltage - 5 V

P1dB-Compression-Point 9 W

Product Details

3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT

Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.

â€¢ Typical Single-Carrier W-CDMA Performance: VDD = 12 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain â€” 10 dB
Efficiency â€” 25%
ACPR @ 5 MHz Offset â€” -43 dBc in 3.84 MHz Channel Bandwidth
â€¢ 9 Watts P1dB @ 3550 MHz, CW
â€¢ Excellent Phase Linearity and Group Delay Characteristics
â€¢ High Gain, High Efficiency and High Linearity
â€¢ RoHS Compliant
â€¢ In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

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Mfr. Part #: MRFG35010ANT1