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NDS8934

MOSFET 3.8A 2 P-Channel (Dual) Surface Mount -55Â°C ~ 150Â°C (TJ) 8-SOIC (0.154", 3.90mm Width) 900mW 20V

Product Category: FETs - Arrays
Mfr. Part #
NDS8934
Manufacturer: onsemi
Package: 8-SOIC (0.154", 3.90mm Width)
Lead Free Status /RoHS Status:
Data Sheet: NDS8934 Datasheet
Inventory: In Stock

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Mfr. Part #: NDS8934

Specifications
Product Details

Specifications

Manufacturer onsemi

Product Category FETs - Arrays

Series -

Packaging Tape & Reel (TR)

Package-Case 8-SOIC (0.154", 3.90mm Width)

Operating-Temperature -55Â°C ~ 150Â°C (TJ)

Mounting-Type Surface Mount

Supplier-Device-Package 8-SO

FET-Type 2 P-Channel (Dual)

Power-Max 900mW

VDSS â€“ Drain-Source Voltage 20V

Input Capacitance 1120pF @ 10V

FET-Feature Logic Level Gate

Current-Continuous-Drain-Id-25Â°C 3.8A

Rds-On-Max-Id-Vgs 70 mOhm @ 3.8A, 4.5V

Vgs-th-Max-Id 1V @ 250Î¼A

Gate-Charge-Qg-Vgs 30nC @ 4.5V

Product Details

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

â– -3.8A, -20V. RDS(ON) = 0.07Î© @ VGS = -4.5V
RDS(ON) = 0.1Î© @ VGS = -2.7V.
â– High density cell design for extremely low RDS(ON).
â– High power and current handling capability in a widely used surface mount package.
â– Dual MOSFET in surface mount package.

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Mfr. Part #: NDS8934