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NDS9953A

MOSFET 2.9A 2 P-Channel (Dual) Surface Mount -55Â°C ~ 150Â°C (TJ) 8-SOIC (0.154", 3.90mm Width) 900mW 30V

Product Category: FETs - Arrays
Mfr. Part #
NDS9953A
Manufacturer: onsemi
Package: 8-SOIC (0.154", 3.90mm Width)
Lead Free Status /RoHS Status:
Data Sheet: NDS9953A Datasheet
Inventory: In Stock

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Mfr. Part #: NDS9953A

Specifications
Product Details

Specifications

Manufacturer onsemi

Product Category FETs - Arrays

Series -

Packaging Package-Case

8-SOIC (0.154", 3.90mm Width) Operating-Temperature

-55Â°C ~ 150Â°C (TJ) Mounting-Type

Surface Mount Supplier-Device-Package

8-SO FET-Type

2 P-Channel (Dual) Power-Max

900mW VDSS â€“ Drain-Source Voltage

30V Input Capacitance

350pF @ 10V FET-Feature

Logic Level Gate Current-Continuous-Drain-Id-25Â°C

2.9A Rds-On-Max-Id-Vgs

130 mOhm @ 1A, 10V Vgs-th-Max-Id

2.8V @ 250Î¼A Gate-Charge-Qg-Vgs

Product Details

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

â– -2.9A, -30V. RDS(ON) = 0.13W @ VGS = -10V.
â– High density cell design for extremely low RDS(ON).
â– High power and current handling capability in a widely used
surface mount package.
â– Dual MOSFET in surface mount package.

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Mfr. Part #: NDS9953A