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NGTB40N60FL2WG
IGBT 80A Trench Field Stop Through Hole 366W 72ns TO-247 600V
- Product Category: IGBTs - Single
- Mfr. Part # NGTB40N60FL2WG
- Manufacturer: onsemi
- Package: TO-247-3
- Lead Free Status /RoHS Status:
- Data Sheet: NGTB40N60FL2WG Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Mfr. Part #: NGTB40N60FL2WG
- Specifications
- Product Details
Specifications
Product Details
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features
• Low Saturation Voltage using Trench with Fieldstop Technology• Low Switching Loss Reduces System Power Dissipation
• Low Gate Charge
• Soft, Fast Free Wheeling Diode
• These are Pb−Free Devices
Typical Applications
• Inductive Heating• Soft Switching
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the NGTB40N60FL2WG. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: NGTB40N60FL2WG