wholesale NXH100B120H3Q0STG IGBT Modules supplier,manufacturer,distributor

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NXH100B120H3Q0SG

IGBT Modules Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. Solder pins, TIM

  • IGBT Modules
  • NXH100B120H3Q0STG
  • onsemi
  • Tray
  • NXH100B120H3Q0STG Datasheet
  • In Stock
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Mfr. Part #: NXH100B120H3Q0STG

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  • Specifications

Specifications

Manufacturer onsemi
RoHS
Product IGBT Silicon Carbide Modules
Configuration Dual
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.77 V
Continuous Collector Current at 25 C 50 A
Gate-Emitter Leakage Current 800 nA
Pd - Power Dissipation 186 W
Package / Case Q0BOOST
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Packaging Tray
Technology SiC
Brand onsemi
Mounting Style Press Fit
Maximum Gate Emitter Voltage 20 V
Product Type IGBT Modules
Standard Pack Qty 24
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the NXH100B120H3Q0SG. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: NXH100B120H3Q0STG

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