wholesale NXH350N100H4Q2F2P1G IGBT Modules supplier,manufacturer,distributor

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NXH350N100H4Q2F2

IGBT Modules Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins

  • IGBT Modules
  • NXH350N100H4Q2F2P1G
  • onsemi
  • Tray
  • NXH350N100H4Q2F2P1G Datasheet
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Mfr. Part #: NXH350N100H4Q2F2P1G

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  • Specifications

Specifications

Manufacturer onsemi
RoHS
Product IGBT Silicon Modules
Configuration 3-Phase Inverter
Collector- Emitter Voltage VCEO Max 1 kV
Collector-Emitter Saturation Voltage 1.63 V, 1.75 V
Continuous Collector Current at 25 C 303 A, 298 A
Gate-Emitter Leakage Current 2 uA
Pd - Power Dissipation 592 W, 731 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Packaging Tray
Brand onsemi
Product Type IGBT Modules
Standard Pack Qty 12
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the NXH350N100H4Q2F2. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: NXH350N100H4Q2F2P1G

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