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RJH65T46DPQA0T0

IGBT Transistors IGBT - 650V/40A/TO-247A

  • IGBT Transistors
  • RJH65T46DPQ-A0#T0
  • Renesas Electronics
  • Tube
  • In Stock
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Mfr. Part #: RJH65T46DPQ-A0#T0

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  • Specifications

Specifications

Manufacturer Renesas Electronics
RoHS
Technology Si
Package / Case TO-247A-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.8 V
Maximum Gate Emitter Voltage - 30 V, 30 V
Continuous Collector Current at 25 C 80 A
Pd - Power Dissipation 340.9 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Packaging Tube
Continuous Collector Current Ic Max 80 A
Height mm
Length mm
Width mm
Brand Renesas Electronics
Gate-Emitter Leakage Current +/- 1 uA
Product Type IGBT Transistors
Standard Pack Qty 25
Subcategory IGBTs

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Mfr. Part #: RJH65T46DPQ-A0#T0

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