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STBV32-AP

RF Bipolar Transistors PTD IGBT & IPM

  • RF Bipolar Transistors
  • STBV32-AP
  • STMicroelectronics
  • STBV32-AP Datasheet
  • In Stock
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Mfr. Part #: STBV32-AP

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  • Specifications

Specifications

Manufacturer STMicroelectronics
RoHS
Series STBV32
Transistor Type Bipolar
Technology Si
Transistor Polarity NPN
Collector- Emitter Voltage VCEO Max 400 V
Emitter- Base Voltage VEBO 9 V
Continuous Collector Current 1.5 A
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C
Configuration Single
Mounting Style Through Hole
Package / Case TO-92AP
RF & Wireless RF Bipolar Transistors
DC Current Gain hFE Max 20
Height 4.5 mm
Length 4.8 mm
Type RF Bipolar Small Signal
Width 3.8 mm
Brand STMicroelectronics
Maximum DC Collector Current 1.5 A
Pd - Power Dissipation 1.5 W
Product Type RF Bipolar Transistors
Standard Pack Qty 2000
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the STBV32-AP. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: STBV32-AP

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