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STGW40M120DF3

IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 40 A low loss

  • IGBT Transistors
  • STGW40M120DF3
  • STMicroelectronics
  • Tube
  • STGW40M120DF3 Datasheet
  • In Stock
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Mfr. Part #: STGW40M120DF3

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  • Specifications

Specifications

Manufacturer STMicroelectronics
RoHS
Technology Si
Package / Case TO-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.85 V
Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 80 A
Pd - Power Dissipation 468 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series M
Packaging Tube
Continuous Collector Current Ic Max 40 A
Brand STMicroelectronics
Gate-Emitter Leakage Current 250 nA
Product Type IGBT Transistors
Standard Pack Qty 600
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the STGW40M120DF3. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: STGW40M120DF3

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